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| IXZ318N50 Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient Tc = 25C Tc = 25C, pulse width limited by TJM Tc = 25C Tc = 25C IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 IS = 0 VDSS ID25 RDS(on) PDC V V V V A A A mJ V/ns V/ns W W W C/W C/W SG1 SG2 GATE = = = 500 V 19 A 0.34 880 W Maximum Ratings 500 500 20 30 19 95 19 TBD 5 >200 880 PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditions Tc = 25C Tamb = 25C DRAIN 440 3.0 0.17 0.34 SD1 SD2 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. V 4.9 6.5 100 TJ = 25C TJ =125C Features VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight VGS = 0 V, ID = 4 ma VDS = VGS, ID = 250 VGS = 20 VDC, VDS = 0 VDS = 0.8VDSS VGS=0 500 3.5 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power * * - - * * * cycling capability IXYS advanced Z-MOS process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials V nA A mA S 50 1 .32 5.0 -55 175 -55 + 175 300 3.5 5.4 .34 6.0 +175 VGS = 20 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% VDS = 50 V, ID = 0.5ID25, pulse test Advantages C C C C g * Optimized for RF and high speed * Easy to mount--no insulators needed * High power density 1.6mm(0.063 in) from case for 10 s IXZ318N50 Z-MOS RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. RG Ciss Coss Crss Cstray Td(on) Ton Td(off) Toff Source-Drain Diode Symbol IS ISM VSD Trr Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = Is, VGS=0 V, Pulse test, t 300 s, duty cycle 2% VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 1 (External) Back Metal to any Pin VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz typ. max. 1 pF pF pF pF ns ns ns ns 1950 175 17 33 4 4 5 6 Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. 19 114 1.5 200 A A V ns CAUTION: Operation at or above the Maximum Ratings values may impact device reliability or cause permanent damage to the device. Information in this document is believed to be accurate and reliable. IXYSRF reserves the right to make changes to information published in this document at any time and without notice. For detailed device mounting and installation instructions, see the "Device Installation & Mounting Instructions" technical note on the IXYSRF web site at; http://www.ixysrf.com/pdf/switch_mode/appnotes/7de_series_mosfet_installation_instructions.pdf IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 5,034,796 5,381,025 4,860,072 5,049,961 5,640,045 4,881,106 5,063,307 4,891,686 5,187,117 4,931,844 5,237,481 5,017,508 5,486,715 IXZ318N50 Z-MOS RF Power MOSFET Fig. 1 Typical Transfer Characteristics V DS = 50V, P.W. = 20 S 70 60 35 9V - 15V 8.5V Fig. 2 Typical Output Characteristics 30 ID, Drain Current (A) ID , Drain Currnet (A) 50 40 30 20 10 0 5 6 7 8 9 10 11 12 13 14 15 25 20 15 7.5V 8V 10 5 0 0 25 50 75 100 125 7V 6.5V VGS, Gate-to Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig. 3 16 Gate Charge vs. Gate-to-Source Voltage V DS = 250V, ID = 9.5A, IG = 3m A Fig. 4 Extended Typical Output Characteristics 100 Top 12V - 15V 10V 9V 8.5V 8V 7.5V 7V 6.5V Gate-to-Source Voltage (V) 14 10 8 6 4 2 0 0 20 40 60 80 ID, Drain Currnet (A) 12 80 60 40 Bottom 20 0 0 20 40 60 80 100 120 Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig. 5 VDS vs. Capacitance 10000 Ciss Capacitance (pF) 1000 Coss 100 Crss 10 1 0 50 100 150 200 250 300 350 400 VDS Voltage (V) IXZ318N50 Z-MOS RF Power MOSFET Fig. 6 Package Drawing Source Source Gate Drain Source Source Doc #dsIXZ318N50 REV 07/09 (c) 2009 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: sales@ixyscolorado.com Web: http://www.ixyscolorado.com |
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